Tunable Charge-Trap Memory Based on Few-Layer MoS2
Overview
publication date
- January 1, 2015
has restriction
- green
Date in CU Experts
- December 22, 2017 10:54 AM
Full Author List
- Zhang E; Wang W; Zhang C; Jin Y; Zhu G; Sun Q; Zhang DW; Zhou P; Xiu F
author count
- 9
citation count
- 373
published in
Other Profiles
International Standard Serial Number (ISSN)
- 1936-0851
Electronic International Standard Serial Number (EISSN)
- 1936-086X
Digital Object Identifier (DOI)
Additional Document Info
start page
- 612
end page
- 619
volume
- 9
issue
- 1