Tunable Charge-Trap Memory Based on Few-Layer MoS2 uri icon

Overview

publication date

  • January 1, 2015

has restriction

  • green

Date in CU Experts

  • December 22, 2017 10:54 AM

Full Author List

  • Zhang E; Wang W; Zhang C; Jin Y; Zhu G; Sun Q; Zhang DW; Zhou P; Xiu F

author count

  • 9

citation count

  • 373

Other Profiles

International Standard Serial Number (ISSN)

  • 1936-0851

Electronic International Standard Serial Number (EISSN)

  • 1936-086X

Additional Document Info

start page

  • 612

end page

  • 619

volume

  • 9

issue

  • 1