Modeling of substrate noise coupling for nMOS transistors in heavily doped substrates Journal Article uri icon

Overview

publication date

  • August 1, 2005

has restriction

  • closed

Date in CU Experts

  • September 19, 2016 1:24 AM

Full Author List

  • Hsu SC; Fiez TS; Mayaram K

author count

  • 3

citation count

  • 6

Other Profiles

International Standard Serial Number (ISSN)

  • 0018-9383

Electronic International Standard Serial Number (EISSN)

  • 1557-9646

Additional Document Info

start page

  • 1880

end page

  • 1886

volume

  • 52

issue

  • 8