Strong Absorption Enhancement in Si Nanorods. Journal Article uri icon

Overview

abstract

  • We report two orders of magnitude stronger absorption in silicon nanorods relative to bulk in a wide energy range. The local field enhancement and dipole matrix element contributions were disentangled experimentally by single-dot absorption measurements on differently shaped particles as a function of excitation polarization and photon energy. Both factors substantially contribute to the observed effect as supported by simulations of the light-matter interaction and atomistic calculations of the transition matrix elements. The results indicate strong shape dependence of the quasidirect transitions in silicon nanocrystals, suggesting nanostructure shape engineering as an efficient tool for overcoming limitations of indirect band gap materials in optoelectronic applications, such as solar cells.

publication date

  • December 14, 2016

Full Author List

  • Sychugov I; Sangghaleh F; Bruhn B; Pevere F; Luo J-W; Zunger A; Linnros J

Other Profiles

Additional Document Info

start page

  • 7937

end page

  • 7941

volume

  • 16

issue

  • 12