Why is heavily-defected CuInSe2 a good opto-electronic material: Defect physics in CuInSe2
Journal Article
Overview
publication date
- January 1, 1998
Date in CU Experts
- September 3, 2013 3:27 AM
Full Author List
- Wei SH; Zhang SB; Zunger A
Full Editor List
- Tomlinson RD; Hill AE; Pilkington RD
author count
- 3
citation count
- 9
published in
Other Profiles
International Standard Serial Number (ISSN)
- 0951-3248
Additional Document Info
start page
- 765
end page
- 771
volume
- 152