Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy Journal Article uri icon

Overview

publication date

  • September 1, 2011

has restriction

  • closed

Date in CU Experts

  • September 6, 2013 12:44 PM

Full Author List

  • Brubaker MD; Levin I; Davydov AV; Rourke DM; Sanford NA; Bright VM; Bertness KA

author count

  • 7

citation count

  • 70

Other Profiles

International Standard Serial Number (ISSN)

  • 0021-8979

Electronic International Standard Serial Number (EISSN)

  • 1089-7550

Additional Document Info

volume

  • 110

issue

  • 5

number

  • ARTN 053506