Effect of AlN buffer layer properties on the morphology and polarity of GaN nanowires grown by molecular beam epitaxy Journal Article uri icon

Overview

publication date

  • September 1, 2011

Full Author List

  • Brubaker MD; Levin I; Davydov AV; Rourke DM; Sanford NA; Bright VM; Bertness KA

Other Profiles

Additional Document Info

volume

  • 110

issue

  • 5