Cluster-doping approach for wide-gap semiconductors: the case of p-type ZnO. Journal Article uri icon

Overview

abstract

  • First-principles calculations on p-type doping of the paradigm wide-gap ZnO semiconductor reveal that successful doping depends much on engineering a stable local chemical bonding environment. We suggest a cluster-doping approach in which a locally stable chemical environment is realized by using few dopant species. We explain two puzzling experimental observations, i.e., that monodoping N in ZnO via N2 fails to produce p-type behavior, whereas using an NO source produces metastable p-type behavior, which disappears over time.

publication date

  • June 1, 2003

has restriction

  • closed

Date in CU Experts

  • November 15, 2013 2:02 AM

Full Author List

  • Wang LG; Zunger A

author count

  • 2

citation count

  • 5

Other Profiles

International Standard Serial Number (ISSN)

  • 0031-9007

Electronic International Standard Serial Number (EISSN)

  • 1079-7114

Additional Document Info

start page

  • 256401

volume

  • 90

issue

  • 25 Pt 1