Study of surface acoustic waves on the {110} plane of gallium arsenide Journal Article uri icon

Overview

abstract

  • Piezoelectric semiconductors such as GaAs are of interest for signal processing devices due to the possibility of monolithic integration of surface-acoustic-wave (SAW) -based devices and active electronic circuits on the same substrate. The common crystal orientation of GaAs for these applications has been the {100} cut. In this paper the characteristics of surface wave propagation in the {110} plane of GaAs, which supports both the Rayleigh and the Bleustein–Gulyaev surface wave modes, are investigated. Several test devices have been fabricated and studied using laser probe and S-parameter measurement techniques. The SAW velocity, attenuation, piezoelectric coupling constant, slowness surface, beam profile, and the transducer characteristics have been measured, and the experimental results agree well with the theoretical calculations for both types of the surface wave modes.

publication date

  • January 15, 1992

has restriction

  • bronze

Date in CU Experts

  • December 10, 2013 10:43 AM

Full Author List

  • Bright VM; Kim Y; Hunt WD

author count

  • 3

Other Profiles

International Standard Serial Number (ISSN)

  • 0021-8979

Electronic International Standard Serial Number (EISSN)

  • 1089-7550

Additional Document Info

start page

  • 597

end page

  • 605

volume

  • 71

issue

  • 2