Micromechanical properties of silicon-carbide thin films deposited using single-source chemical-vapor deposition Journal Article uri icon



  • 1,3-Disilabutane is used as a single-source precursor to deposit conformal silicon-carbide films on silicon atomic-force-microscopy cantilevers. By measuring the resonance frequency of the cantilever as a function of silicon-carbide film thickness and developing an appropriate model, the value of the film’s elastic modulus is determined. This value is in good agreement with those reported for silicon-carbide films deposited using conventional dual-source chemical-vapor deposition. Additionally, we comment on the feasibility of integrating this process into the fabrication technology for microelectromechanical systems.

publication date

  • July 16, 2001

has restriction

  • closed

Date in CU Experts

  • January 15, 2014 10:44 AM

Full Author List

  • Stoldt CR; Fritz MC; Carraro C; Maboudian R

author count

  • 4

Other Profiles

International Standard Serial Number (ISSN)

  • 0003-6951

Electronic International Standard Serial Number (EISSN)

  • 1077-3118

Additional Document Info

start page

  • 347

end page

  • 349


  • 79


  • 3