Interpretation of the conductance and capacitance frequency dependence of hydrogenated amorphous silicon Schottky barrier diodes Journal Article uri icon



  • We present a general model of the frequency dependence of conductance and capacitance in a-Si:H Schottky diodes. In order to circumvent several questionable assumptions required in the analysis of capacitance voltage characteristics, the frequency dependence of sputtered a-Si:H devices is measured with no applied dc voltage. We obtain independent, consistent values of the depletion width and of the density of states at the Fermi level and below from both conductance and capacitance at both low and high modulation frequencies. We show that the linear frequency dependence of conductance cannot be attributed to hopping conductance, but rather to the interaction of gap states with free carriers. Our study shows that the interaction kinetics of the states around the Fermi level with the conduction-band carriers is so fast that the response of the diode is limited by the band transport of these carriers, which rapidly thermalize and distribute themselves through the continuum of states from the conduction band to the Fermi level.

publication date

  • September 1, 1980

has restriction

  • closed

Date in CU Experts

  • April 11, 2014 10:49 AM

Full Author List

  • Viktorovitch P; Moddel G

author count

  • 2

Other Profiles

International Standard Serial Number (ISSN)

  • 0021-8979

Electronic International Standard Serial Number (EISSN)

  • 1089-7550

Additional Document Info

start page

  • 4847

end page

  • 4854


  • 51


  • 9