MBE growth and characterization of SrGa2S4: Ce blue phosphor for thin‐film electroluminescence Journal Article uri icon

Overview

abstract

  • Abstract— In this paper, we report further investigations of the MBE growth and characterization of cerium‐doped strontium thiogallate (SrGa2S4: Ce). Using Sr, Ga2S3, and CeCl3 as source materials the optimum growth conditions for single‐phase polycrystalline SrGa2S4 film were found to be substrate temperatures of 550–560°C and Ga2S3/Sr beam equivalent pressure (BEP) ratios of 50–60. CeCl3/Sr flux (molecules cm−2 s−1) ratios of 0.01–0.1 were studied, and the optimum Ce doping concentration has been found to be about 3 at.%. Characterization of the structural, electrical, and optical properties by XRD, TEM, EDS, SIMS, and PL will be presented.

publication date

  • December 1, 1996

has restriction

  • closed

Date in CU Experts

  • April 12, 2014 3:35 AM

Full Author List

  • Yang T; Chaichimansour M; Park W; Wagner BK; Schaus C; Sun S; Thomas E; Wang ZL; Summers CJ

author count

  • 9

Other Profiles

International Standard Serial Number (ISSN)

  • 1071-0922

Electronic International Standard Serial Number (EISSN)

  • 1938-3657

Additional Document Info

start page

  • 311

end page

  • 313

volume

  • 4

issue

  • 4