Thin SiO2 coating on ZnS phosphors for improved low-voltage cathodoluminescence properties Journal Article uri icon



  • A significant improvement (40–60%) was reported in the low voltage (100–1000V) cathodoluminescence efficiency of ZnS phosphors coated with SiO2 by the sol-gel technique. The properties of the coatings were found to be critically dependent upon the precursor concentration, pH value and the temperature of the solution with optimum performance being obtained for a SiO2 concentration of 1.0 wt%, pH values between 7–9, and a solution temperature of 83 °C. The efficiency curves exhibited a characteristic voltage dependence which was analyzed by a one-dimensional numerical model. Enhanced low voltage efficiency was attributed to a reduction of surface recombination and the actual shape of the efficiency curve was determined by the interplay between the reduction of surface recombination and energy losses in the SiO2 coating.

publication date

  • November 1, 2000

has restriction

  • green

Date in CU Experts

  • April 12, 2014 3:50 AM

Full Author List

  • Park W; Wagner BK; Russell G; Yasuda K; Summers CJ; Do YR; Yang HG

author count

  • 7

Other Profiles

International Standard Serial Number (ISSN)

  • 0884-2914

Electronic International Standard Serial Number (EISSN)

  • 2044-5326

Additional Document Info

start page

  • 2288

end page

  • 2291


  • 15


  • 11