First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with f(T)/f(MAX) of 7/5.2 GHz Conference Proceeding uri icon


publication date

  • June 11, 2005

Full Author List

  • Zhao F; Perez-Wurfl I; Huang CF; Torvik J; Van Zeghbroeck B

Additional Document Info

start page

  • 2035

end page

  • 2038