First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with f(T)/f(MAX) of 7/5.2 GHz
Conference Proceeding
Overview
publication date
- June 11, 2005
Full Author List
- Zhao F; Perez-Wurfl I; Huang CF; Torvik J; Van Zeghbroeck B
published in
Additional Document Info
start page
- 2035
end page
- 2038