First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with f(T)/f(MAX) of 7/5.2 GHz Conference Proceeding uri icon

Overview

publication date

  • June 11, 2005

Date in CU Experts

  • May 28, 2014 4:13 AM

Full Author List

  • Zhao F; Perez-Wurfl I; Huang CF; Torvik J; Van Zeghbroeck B

author count

  • 5

citation count

  • 3

Other Profiles

International Standard Serial Number (ISSN)

  • 0149-645X

International Standard Book Number (ISBN) 10

  • 0-7803-8845-3

Additional Document Info

start page

  • 2035

end page

  • 2038