First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with f(T)/f(MAX) of 7/5.2 GHz
Conference Proceeding
Overview
publication date
- June 11, 2005
Date in CU Experts
- May 28, 2014 4:13 AM
Full Author List
- Zhao F; Perez-Wurfl I; Huang CF; Torvik J; Van Zeghbroeck B
author count
- 5
citation count
- 3
published in
presented at event
- IEEE MTT-S International Microwave Symposium Conference
Other Profiles
International Standard Serial Number (ISSN)
- 0149-645X
International Standard Book Number (ISBN) 10
- 0-7803-8845-3
Additional Document Info
start page
- 2035
end page
- 2038