First Transistor Demonstration of Thermal Atomic Layer Etching: InGaAs FinFETs with sub-5 nm Fin-width Featuring in situ ALE-ALD
Conference Proceeding
Overview
publication date
- December 1, 2018
Date in CU Experts
- February 9, 2019 4:48 AM
Full Author List
- Lu W; Lee Y; Murdzek J; Gertsch J; Vardi A; Kong L; George SM; del Alamo JA
author count
- 8
citation count
- 18
presented at event
Other Profiles
International Standard Serial Number (ISSN)
- 2380-9248