First Transistor Demonstration of Thermal Atomic Layer Etching: InGaAs FinFETs with sub-5 nm Fin-width Featuring in situ ALE-ALD Conference Proceeding uri icon

Overview

publication date

  • December 1, 2018

Date in CU Experts

  • February 9, 2019 4:48 AM

Full Author List

  • Lu W; Lee Y; Murdzek J; Gertsch J; Vardi A; Kong L; George SM; del Alamo JA

author count

  • 8

citation count

  • 4

Other Profiles

International Standard Serial Number (ISSN)

  • 2380-9248