Analysis of power dissipation and high temperature operation in 4H-SiC bipolar junction transistors with 4.9 MW/cm(2) power density handling ability. uri icon

Overview

publication date

  • January 1, 2004

has restriction

  • closed

Date in CU Experts

  • September 6, 2013 12:31 PM

Full Author List

  • Perez-Wurfl I; Torvik J; Van Zeghbroeck B

Full Editor List

  • Madar R; Camassel J

author count

  • 3

citation count

  • 6

Other Profiles

International Standard Serial Number (ISSN)

  • 0255-5476

Additional Document Info

start page

  • 1121

end page

  • 1124

volume

  • 457-460