Analysis of power dissipation and high temperature operation in 4H-SiC bipolar junction transistors with 4.9 MW/cm(2) power density handling ability. Journal Article uri icon


publication date

  • January 1, 2004

Full Author List

  • Perez-Wurfl I; Torvik J; Van Zeghbroeck B

Other Profiles

Additional Document Info

start page

  • 1121

end page

  • 1124


  • 457-460