publication venue for
- Breakdown Field Model for 3C-SiC Power Device Simulations 2018
- Comparison of 3C-SiC and 4H-SiC Power MOSFETs 2018
- Hot Filament CVD Growth of 4H-SiC Epitaxial Layers 2018
- Graphene-Silicon Heterojunction Infrared Photodiode at 1.3/1.55 μm 2016
- Characterization of SOFCS: A Crystallographic Analysis and First Steps towards an Impedance Spectroscopy Approach 2012
- Synthesis and characterization of III-V rod shape semiconductor nanocrystals 2005
- Analysis of power dissipation and high temperature operation in 4H-SiC bipolar junction transistors with 4.9 MW/cm(2) power density handling ability. 2004
- 6H and 4H-SiC Avalanche Photodiodes 2008
- Self-propagating high-temperature synthesis of porous nickel-titanium 2007
- 4H-SiC bipolar transistors with UHF and L-band operation 2005
- Growth, structure and interfaces of Cu and Cu/Ti thin films on (0001)alpha-Al2O3 1996
- The influence of interfacial layers on the ultimate shear strength of copper/sapphire interfaces 1996