Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite. Journal Article uri icon

Overview

abstract

  • Phase transitions in halide perovskites triggered by external stimuli generate significantly different material properties, providing a great opportunity for broad applications. Here, we demonstrate an In-based, charge-ordered (In+/In3+) inorganic halide perovskite with the composition of Cs2In(I)In(III)Cl6 in which a pressure-driven semiconductor-to-metal phase transition exists. The single crystals, synthesized via a solid-state reaction method, crystallize in a distorted perovskite structure with space group I4/m with a = 17.2604(12) Å, c = 11.0113(16) Å if both the strong reflections and superstructures are considered. The supercell was further confirmed by rotation electron diffraction measurement. The pressure-induced semiconductor-to-metal phase transition was demonstrated by high-pressure Raman and absorbance spectroscopies and was consistent with theoretical modeling. This type of charge-ordered inorganic halide perovskite with a pressure-induced semiconductor-to-metal phase transition may inspire a range of potential applications.

publication date

  • November 19, 2019

Full Author List

  • Lin J; Chen H; Gao Y; Cai Y; Jin J; Etman AS; Kang J; Lei T; Lin Z; Folgueras MC

Other Profiles

Additional Document Info

start page

  • 23404

end page

  • 23409

volume

  • 116

issue

  • 47