Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC Journal Article uri icon

Overview

abstract

  • Analysis of hot-filament CVD (HF-CVD) growth of high quality 3C-SiC on micron-sized 3C-SiC mesas is presented. Two types of growth were observed: 1) a relatively slow growth at about 1μm/hour, and 2) an almost three times faster growth, correlated with the presence of domain boundaries in, or adjacent to, the mesas. Both reveal well-defined crystallographic facets and sharp corners between them. The slower growth has been identified to be surface-nucleation-limited, seemingly defect-free, while the faster growth has been identified as being caused by defect-induced step-flow growth. A growth model is presented, yielding a growth rate of 1.18 μm/h for the defect free {111} and (100) plane and 2.8 μm/h for {110} planes.

publication date

  • July 1, 2020

Date in CU Experts

  • January 13, 2021 4:24 AM

Full Author List

  • Van Zeghbroeck B; Brow R; Borsa T; Bobela D

author count

  • 4

Other Profiles

Electronic International Standard Serial Number (EISSN)

  • 1662-9752

Additional Document Info

start page

  • 126

end page

  • 131

volume

  • 1004