Impact of Mechanical Strain on Auger Recombination in InGaAs/InP Conference Proceeding

Overview

abstract

We characterized the impact of mechanically-applied biaxial strain on Auger recombination in InGaAs quantum wells using time-resolved photoluminescence. Our results support that Auger recombination is reduced by mechanical distortion introduced by strained-layer epitaxy.

CU Boulder Authors

Gopinath, Juliet T

publication date

January 1, 2024

has restriction

closed

Date in CU Experts

January 30, 2025 11:07 AM

Full Author List

Simmons YL; Dickson K; Ricks AF; Skipper AM; Briggs AF; Muhowski AJ; Bank SR; Gopinath JT

author count

8

presented at event

CLEO: Applications and Technology Conference

Other Profiles

Digital Object Identifier (DOI)

https://doi.org/10.1364/cleo_at.2024.jth2a.14

Additional Document Info

start page

JTh2A.14

end page

JTh2A.14