selected publications
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conference proceeding
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Electron/Ion Channeling Contrast Imaging and Grayscale Image Analysis Using 3C-SiC Twin Structures.
Microscopy and Microanalysis.
692-693.
2018
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Epitaxial growth of cubic silicon carbide on silicon using hot filament chemical vapor deposition.
Thin Solid Films.
48-52.
2016
- Graphene Junction Field-Effect Transistor. 139-140. 2015
- Design and Simulation of Multi-Quantum-Well GaAs/AlGaAs Single Junction p-i-n with Back Surface DBR Reflector. 785-788. 2012
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Self-aligned Process for SiC Power Devices.
MRS Online Proceedings Library.
2010
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6H and 4H-SiC Avalanche Photodiodes.
Materials Science Forum.
869-872.
2008
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4H-SiC bipolar transistors with UHF and L-band operation.
Materials Science Forum.
1421-1424.
2005
- First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with f(T)/f(MAX) of 7/5.2 GHz. IEEE MTT-S International Microwave Symposium digest. IEEE MTT-S International Microwave Symposium. 2035-2038. 2005
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RF 4H-SiC bipolar junction transistors.
193-200.
2002
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SiC bipolar transistors for RF applications..
2-4.
2001
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Fabrication and characterization of 4H-SiC MOS capacitors with atomic layer deposited (ALD) SiO2..
144-147.
2000
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Electron/Ion Channeling Contrast Imaging and Grayscale Image Analysis Using 3C-SiC Twin Structures.
Microscopy and Microanalysis.
692-693.
2018
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journal article
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3C-SiC Island Growth on 4H-Sic Terraces: Statistical Evidence for the Orientation Selection Rule.
Solid State Phenomena.
35-39.
2023
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Design and simulation of 3C-SiC vertical power MOSFETs.
International Journal of Electronics.
841-857.
2021
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Design and simulation of 3C-SiC vertical power MOSFETs.
International Journal of Electronics.
2020
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Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC.
Materials Science Forum.
126-131.
2020
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Opto-electronic properties of Co-Zn-Ni-O films deposited by RF-sputtering at ambient-temperature.
Journal of Alloys and Compounds.
409-414.
2019
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Comparison of 3C-SiC and 4H-SiC Power MOSFETs.
Materials Science Forum.
774-777.
2018
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Hot Filament CVD Growth of 4H-SiC Epitaxial Layers.
Materials Science Forum.
120-123.
2018
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Breakdown Field Model for 3C-SiC Power Device Simulations.
Materials Science Forum.
617-620.
2018
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Hot Filament CVD epitaxy of 3C-SiC on 6H and 3C-SiC substrates.
MRS Advances.
289-294.
2017
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Graphene-Silicon Heterojunction Infrared Photodiode at 1.3/1.55 μm.
Materials Science Forum.
1153-1157.
2016
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Analysis of the GaAs/GaAsBi Material System for Heterojunction Bipolar Transistors.
IEEE Transactions on Electron Devices.
200-205.
2013
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High-speed nanoscale metal-semiconductor-metal photodetectors with terahertz bandwidth.
Optical and Quantum Electronics.
771-776.
2011
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Novel Nano-structured Metal-Semiconductor-Metal Photodetector with High Peak Voltage.
Japanese Journal of Applied Physics.
2009
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Dial-a-Size: Precision Quantum Dot Nanopatterning Using Cheap, Off-the-Shelf Copolymers.
Journal of Applied Polymer Science.
3785-3794.
2008
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Optimized reactive ion etch process for high performance SiC bipolar junction transistors.
Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films .
961-966.
2007
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Demonstration of long-pulse power amplification at 1 GHz using 4H-SiC RF BJTs on a conductive substrate.
IEEE Electron Device Letters.
398-400.
2007
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Analysis of transit times an minority carrier mobility in n-p-n 4H-SiC bipolar junction transistors.
IEEE Transactions on Electron Devices.
2541-2545.
2005
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Analysis of power dissipation and high temperature operation in 4H-SiC bipolar junction transistors with 4.9 MW/cm(2) power density handling ability..
Materials Science Forum.
1121-1124.
2004
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4H-SiC bipolar junction transistor with high current and power density.
Solid-State Electronics.
229-231.
2003
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GaN/SiC heterojunction bipolar transistors.
Solid-State Electronics.
1229-1233.
2000
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Temperature-dependent tunneling through thermally grown SiO2 on n-type 4H-and 6H-SiC.
Applied Physics Letters.
1039-1041.
2000
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GaN/SiC HBTs and related issues.
Solid-State Electronics.
265-270.
2000
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On field emission from a semiconducting substrate.
Applied Physics Letters.
2410-2412.
1999
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Comparison of GaN and 6H-SiC p-i-n photodetectors with excellent ultraviolet sensitivity and selectivity.
IEEE Transactions on Electron Devices.
1326-1331.
1999
- A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300 degrees C. MRS Internet Journal of Nitride Semiconductor Research. art. no.-3. 1999
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Micromechanical optoelectronic switch and amplifier (MIMOSA).
IEEE Journal of Selected Topics in Quantum Electronics.
33-35.
1999
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Fowler-Nordheim tunneling of holes through thermally grown SiO2 on p(+) 6H-SiC.
Applied Physics Letters.
3692-3694.
1998
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Electrical characterization of GaN/SiC n-p heterojunction diodes.
Applied Physics Letters.
1371-1373.
1998
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Photocurrents in a metal-semiconductor-metal photodetector.
IEEE Journal of Quantum Electronics.
2188-2194.
1997
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A novel high-speed silicon MSM photodetector operating at 830 nm wavelength.
IEEE Electron Device Letters.
175-177.
1995
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OPTICAL DATA COMMUNICATION BETWEEN JOSEPHSON-JUNCTION CIRCUITS AND ROOM-TEMPERATURE ELECTRONICS.
IEEE Transactions on Applied Superconductivity.
2881-2884.
1993
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Low temperature behaviour of short channel GaAs MESFETs.
Cryogenics.
1084-1087.
1990
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Threshold reduction through photon recycling in semiconductor lasers.
Applied Physics Letters.
1310-1312.
1990
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High-speed GaAs/AlGaAs optoelectronic devices for computer applications.
IBM Journal of Research and Development.
568-584.
1990
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Submicron-gate-length GaAs MESFETs.
IBM Journal of Research and Development.
495-505.
1990
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Nanometer sidewall lithography by resist silylation.
Journal of vacuum science & technology. B, Microelectronics and nanometer structures : processing, measurement, and phenomena : an official journal of the American Vacuum Society.
1756-1759.
1989
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105-GHz bandwidth metal-semiconductor-metal photodiode.
IEEE Electron Device Letters.
527-529.
1988
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5.2-GHz bandwidth monolithic GaAs optoelectronic receiver.
IEEE Electron Device Letters.
171-173.
1988
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Analysis of picosecond and subpicosecond MSM photodiodes with very low bias voltage.
IEEE Transactions on Electron Devices.
2433-2433.
1988
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Submicrometer GaAs MESFET with shallow channel and very high transconductance.
IEEE Electron Device Letters.
118-120.
1987
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Scaled GaAs MESFET's with gate length down to 100 nm.
IEEE Electron Device Letters.
522-524.
1986
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Model for a Josephson sampling gate.
Journal of Applied Physics.
2593-2596.
1985
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A Josephson sampler with 2.1 ps resolution.
IEEE Transactions on Magnetics.
226-229.
1985
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Superconducting current injection transistor with very high critical-current-density edge-junctions.
IEEE Transactions on Magnetics.
916-919.
1985
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Superconducting current injection transistor.
Applied Physics Letters.
736-738.
1983
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3C-SiC Island Growth on 4H-Sic Terraces: Statistical Evidence for the Orientation Selection Rule.
Solid State Phenomena.
35-39.
2023